Cree, Inc.
TRENCH BOTTOM SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMICONDUCTOR DEVICE STRUCTURES
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Abstract:
Semiconductor devices and methods of forming a semiconductor device that includes a polysilicon layer that may improve device reliability and/or a functioning of the device. An example device may include a wide band-gap semiconductor layer structure including a drift region that has a first conductivity type; a plurality of gate trenches in an upper portion of the semiconductor layer structure, each gate trench having a bottom surface, a first sidewall, a second sidewall, and an upper opening; and a plurality of polysilicon layers, each polysilicon layer on the second sidewall of a respective gate trench.
Status:
Application
Type:
Utility
Filling date:
11 Sep 2020
Issue date:
17 Mar 2022