Cree, Inc.
POWER SILICON CARBIDE BASED SEMICONDUCTOR DEVICES WITH IMPROVED SHORT CIRCUIT CAPABILITIES AND METHODS OF MAKING SUCH DEVICES

Abstract:

A power semiconductor device has a semiconductor layer structure that includes a silicon carbide drift region having a first conductivity type, first and second wells in the silicon carbide drift region that are doped with dopants having a second conductivity type, and a JFET region between the first and second wells. The first and second wells each include a main well and a side well that is between the main well and the JFET region, and each side well includes a respective channel region. A doping concentration of the JFET region exceeds a doping concentration of the silicon carbide drift region, and a minimum width of an upper portion of the JFET region is greater than a minimum width of a lower portion of the JFET region.