Cree, Inc.
TRANSISTOR PACKAGES WITH IMPROVED DIE ATTACH
Last updated:
Abstract:
A transistor device structure may include a submount, a transistor device on the carrier submount, and a metal bonding layer between the submount and the transistor die, the metal bonding stack providing mechanical attachment of the transistor die to the submount. The metal bonding stack may include gold, tin and nickel. A weight percentage of a combination of nickel and tin in the metal bonding layer is greater than 50 percent and a weight percentage of gold in the metal bonding layer is less than 25 percent.
Status:
Application
Type:
Utility
Filling date:
30 Oct 2020
Issue date:
5 May 2022