Cree, Inc.
POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES

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Abstract:

A power semiconductor device comprises a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material that has a first conductivity type, a well region that has a second conductivity type, and a source region that has the first conductivity type in an upper portion of the well region and a gate trench in an upper portion of the semiconductor layer structure and comprising a portion obliquely angled in plan view. Sidewalls of the gate trench may extend along substantially the same crystal plane in the semiconductor layer structure.

Status:
Application
Type:

Utility

Filling date:

23 Jul 2021

Issue date:

28 Apr 2022