Cree, Inc.
POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES
Last updated:
Abstract:
A power semiconductor device comprises a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material that has a first conductivity type, a well region that has a second conductivity type, and a source region that has the first conductivity type in an upper portion of the well region and a gate trench in an upper portion of the semiconductor layer structure and comprising a portion obliquely angled in plan view. Sidewalls of the gate trench may extend along substantially the same crystal plane in the semiconductor layer structure.
Status:
Application
Type:
Utility
Filling date:
23 Jul 2021
Issue date:
28 Apr 2022