Cree, Inc.
FIELD EFFECT TRANSISTOR WITH ENHANCED RELIABILITY
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Abstract:
A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance .GAMMA..sub.D. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance .GAMMA..sub.D is less than about 0.3 .mu.m, and the distance d1 is less than about 80 nm.
Utility
20 May 2021
28 Apr 2022