Cree, Inc.
SEMICONDUCTOR DEVICES INCLUDING AN OFFSET METAL TO POLYSILICON GATE CONTACT

Abstract:

Power switching devices include a semiconductor layer structure, a unit cell transistor comprising a gate finger, the gate finger extending in a first direction in a gate trench that is below a surface of the semiconductor layer structure, and a gate bus, wherein a portion of the gate bus vertically overlaps the gate finger and is electrically connected to the gate finger.