Entegris, Inc.
SILICON NITRIDE ETCHING COMPOSITION AND METHOD

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Abstract:

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Status:
Application
Type:

Utility

Filling date:

7 Jun 2021

Issue date:

23 Sep 2021