Entegris, Inc.
SILICON NITRIDE ETCHING COMPOSITION AND METHOD
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Abstract:
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
Status:
Application
Type:
Utility
Filling date:
7 Jun 2021
Issue date:
23 Sep 2021