Entegris, Inc.
METHOD FOR NUCLEATION OF CONDUCTIVE NITRIDE FILMS

Abstract:

Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 .ANG. to about 15 .ANG. and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.