Entegris, Inc.
CARBON-FREE LAMINATED HAFNIUM OXIDE/ZIRCONIUM OXIDE FILMS FOR FERROELECTRIC MEMORIES

Abstract:

Provided are carbon-free (i.e., less than about 0.1 atomic percentage of carbon) Zr doped HfO.sub.2 films, where Zr can be up to the same level of Hf in terms of atomic percentage (i.e., 1% to 60%). The Zr doping can be achieved also by nanometer m laminated ZrO.sub.2 and HfO.sub.2 films useful in ferroelectric memories (FeRAM). The laminated films are comprised of about 5 to 10 layers of HfO.sub.2 and ZrO.sub.2 (i.e., alternating) films, each of which for example can be a thickness of about 1 to about 2 nm, wherein the laminated films are a total of about 5 to 10 nm in thickness.