Entegris, Inc.
FLUORINATED COMPOSITIONS FOR ION SOURCE PERFORMANCE IMPROVEMENTS IN NITROGEN ION IMPLANTATION

Abstract:

Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N.sub.2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF.sub.3, N.sub.2F.sub.4, F.sub.2, SiF.sub.4, WF.sub.6, PF.sub.3, PF.sub.5, AsF.sub.3, AsF.sub.5, CF.sub.4 and other fluorinated hydrocarbons of C.sub.xF.sub.y (x.gtoreq.1, y.gtoreq.1) general formula, SF.sub.6, HF, COF.sub.2, OF.sub.2, BF.sub.3, B.sub.2F.sub.4, GeF.sub.4, XeF.sub.2, O.sub.2, N.sub.2O, NO, NO.sub.2, N.sub.2O.sub.4, and O.sub.3, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H.sub.2, NH.sub.3, N.sub.2H.sub.4, B.sub.2H.sub.6, AsH.sub.3, PH.sub.3, SiH.sub.4, Si.sub.2H.sub.6, H.sub.2S, H.sub.2Se, CH.sub.4 and other hydrocarbons of C.sub.xH.sub.y (x.gtoreq.1, y.gtoreq.1) general formula and GeH.sub.4.