Entegris, Inc.
COMPOSITIONS AND METHODS FOR SELECTIVELY ETCHING SILICON NITRIDE FILMS

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Abstract:

Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.

Status:
Application
Type:

Utility

Filling date:

29 Jul 2021

Issue date:

3 Feb 2022