Entegris, Inc.
Etchant Compositions

Abstract:

Provided are compositions and methods for selectively etching hard mask layers and/or photoresist etch residues relative to low-k dielectric layers that are present. More specifically, the present invention relates to a composition and process for selectively etching titanium nitride and/or photoresist etch residues relative to low-k dielectric layers. Other materials that may be present on the microelectronic device should not be substantially removed or corroded by said compositions.