Entegris, Inc.
PHASE-SHIFT RETICLE FOR USE IN PHOTOLITHOGRAPHY

Abstract:

A phase-shift reticle for a photolithography process in semiconductor fabrication is provided. The reticle includes a substrate, a reflective structure, a pattern defining layer and a phase shifter. The reflective structure is disposed over the substrate. The pattern defining layer includes a first material and is deposited over the reflective structure. The pattern defining layer comprises a pattern trench. The phase shifter includes a second material and disposed in the pattern trench. A transmittance of the second material is different from a transmittance of the first material.