Entegris, Inc.
Chemical vapor deposition processes using ruthenium precursor and reducing gas

Abstract:

Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R.sup.1R.sup.2Ru(0), wherein R.sup.1 is an aryl group-containing ligand, and R.sup.2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.