Entegris, Inc.
HIGH THROUGHPUT DEPOSITION PROCESS

Abstract:

The invention provides a PEALD process to deposit etch resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 co-reactant. In one embodiment, this PEALD process relies on a single precursor--a bis(dialkylamino)tetraalkyldisiloxane, together with hydrogen plasma to deposit the etch-resistant thin-films of SiOCN. Since the film can be deposited with a single precursor, the overall process exhibits improved throughput.