Entegris, Inc.
Method for forming carbon rich silicon-containing films
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Abstract:
Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O.sub.2 plasma.
Status:
Grant
Type:
Utility
Filling date:
7 May 2020
Issue date:
16 Aug 2022