Entegris, Inc.
Formulations for high selective silicon nitride etch

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Abstract:

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Status:
Grant
Type:

Utility

Filling date:

21 Aug 2020

Issue date:

23 Aug 2022