Entegris, Inc.
Post chemical mechanical polishing formulations and method of use
Last updated:
Abstract:
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.
Status:
Grant
Type:
Utility
Filling date:
11 Apr 2018
Issue date:
4 Aug 2020