Entegris, Inc.
Post chemical mechanical polishing formulations and method of use

Last updated:

Abstract:

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.

Status:
Grant
Type:

Utility

Filling date:

11 Apr 2018

Issue date:

4 Aug 2020