Entegris, Inc.
In-situ oxidized NiO as electrode surface for high k MIM device

Abstract:

A high dielectric constant metal-insulator structure, including an electrode comprising NiO.sub.x wherein 1<x.ltoreq.1.5, and a high k dielectric material in contact with the electrode. The structure may have a further electrode in contact with the high k dielectric material, to form a metal-insulator-metal (MIM) capacitor, e.g., including a bottom electrode comprising NiO.sub.x wherein 1<x.ltoreq.1.5, a high k dielectric material overlying the bottom electrode, and a top electrode comprising NiO.sub.x wherein 1<x.ltoreq.1.5. The NiO.sub.x electrodes in such applications are oxide-stable, high work function electrodes that avoid deterioration of work function and conductivity during electronic device fabrication involving elevated temperature annealing.