Entegris, Inc.
GERMANIUM TETRAFLOURIDE AND HYDROGEN MIXTURES FOR AN ION IMPLANTATION SYSTEM

Abstract:

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF.sub.4) and hydrogen (H.sub.2) gases to an ion implantation apparatus, so H.sub.2 is present in an amount in the range of 25%-67% (volume) N of the gas mixture, or the GeF.sub.4 and H.sub.2 are present in a volume ratio (GeF.sub.4:H.sub.2) in the range of 3:1 to 33:67. The use of the H.sub.2 gas in an amount in mixture or relative to the GeF.sub.4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge.sup.+ current gain and W.sup.+ peak reduction during an ion implantation procedure.