Entegris, Inc.
TRIIODOSILYLAMINE PRECURSOR COMPOUNDS

Abstract:

Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si--H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.