Entegris, Inc.
SELECTIVE DEPOSITION OF SILICON NITRIDE

Abstract:

Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI.sub.4) or disilicon hexaiodide (Si.sub.2I.sub.6) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.