Entegris, Inc.
PEALD PROCESSES USING RUTHENIUM PRECURSOR

Abstract:

Plasma enhanced atomic layer deposition (PEALD) processes which use a ruthenium precursor of formula R.sup.AR.sup.BRu(0), wherein R.sup.A is an aryl group-containing ligand, and R.sup.B is a diene group-containing ligand, along with a reducing plasma applied at greater than 200 W are described. Use of the R.sup.AR.sup.BRu(0) ruthenium precursors in PEALD with +200 W reducing plasma such as ammonia plasma, can provide very good rates of deposition of Ru, have lower carbon and less resistivity, and provide very dense Ru films. The method can be used to form well-formed Ru film with high conformality on integrated circuits and other microelectronic devices.