General Electric Company
METHODS OF FABRICATING HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRIC FIELD SUPPRESSION

Abstract:

Methods of fabricating a semiconductor device are provided. The method includes providing a plurality of semiconductor devices. The method further includes disposing a dielectric dry film on the plurality of semiconductor devices, wherein the dielectric dry film is patterned such that openings in the patterned dielectric dry film are aligned with conductive pads of each of the plurality of semiconductor devices.