General Electric Company
Systems and methods for integrated diode field-effect transistor semiconductor devices

Abstract:

A silicon carbide (SiC) semiconductor device may include a CB layer defined in a first epitaxial (epi) layer having a first conductivity type. The CB layer may include a plurality of CB regions having a second conductivity type. The SiC semiconductor device may further include a device epi layer having the first conductivity type disposed on the CB layer. The device epi layer may include a plurality of regions having the second conductivity type. Additionally, the SiC semiconductor device may include an ohmic contact disposed on the device epi layer and a rectifying contact disposed on the device epi layer. A field-effect transistor (FET) of the device may include the ohmic contact, and a diode of the device may include the rectifying contact, where the diode and the FET are integrated in the device.