General Electric Company
POWER SEMICONDUCTOR DEVICES WITH HIGH TEMPERATURE ELECTRICAL INSULATION

Abstract:

A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 .mu.m and less than or equal to 500 .mu.m; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.