General Electric Company
Systems and methods for determination of depth of interaction

Abstract:

A detector assembly is provided that includes a semiconductor detector, plural pixelated anodes, and at least one processor. The plural pixelated anodes are disposed on a surface of the semiconductor detector. Each pixelated anode is configured to generate a primary signal responsive to reception of a photon and to generate at least one secondary signal responsive to an induced charge caused by reception of a photon by at least one surrounding anode. The at least one processor is operably coupled to the pixelated anodes and is configured to acquire a primary signal from one of the anodes responsive to reception of a photon; acquire at least one secondary signal from at least one neighboring pixel; and determine a depth of interaction in the semiconductor detector for the reception of the photon by the one of the anodes using the at least one secondary signal.