Corning Incorporated
High Temperature Barrier Film For Molten Wafer Infusion

Abstract:

A metallized via structure may comprise a via hole, a barrier layer deposited within the via hole, and a metallic plug disposed within the via hole. The via hole may be formed in a device package, and the via hole may be defined by at least one interior wall of the device package. The barrier layer may be disposed upon the at least one interior wall to form a barrier layer lined via hole. The metallic plug may be disposed within the barrier lined via hole by pressurized injection of a molten metal, such that the barrier layer is situated between the metallic plug and the at least one interior wall. The barrier layer may be situated to prevent the metallic plug from contacting the interior wall.