Corning Incorporated
UV CROSSLINKING OF PVDF-BASED POLYMERS FOR GATE DIELECTRIC INSULATORS OF ORGANIC THIN-FILM TRANSISTORS

Abstract:

A method includes preparing a mixture having an organic solvent, a fluorine-containing polymer, at least one organic base, and a crosslinker component; depositing the mixture over a substrate to form a first layer; and crosslinking the first layer by light treatment to form a crosslinked gate dielectric layer, such that the fluorine-containing polymer is at least one of homopolymers of vinylidene fluoride or copolymers of vinylidene fluoride with fluorine-containing ethylenic monomers. A transistor includes a crosslinked gate dielectric layer disposed over a substrate; an organic semiconductor layer disposed over the substrate and being in direct contact with the crosslinked gate dielectric layer; a source and a drain in contact with the organic semiconductor layer and defining the ends of a channel through the organic semiconductor layer; and a gate superposed with the channel, such that the crosslinked gate dielectric layer separates the gate from the organic semiconductor layer.