Corning Incorporated
TRANSPARENT CONDUCTOR MATERIALS WITH ENHANCED NEAR INFRARED PROPERTIES AND METHODS OF FORMING THEREOF

Abstract:

A method is provided for manufacturing an article comprising a transparent conductive material, wherein a transparent conductive material (e.g., indium tin oxide) is deposited onto a substrate (e.g., fused silica) by physical vapor deposition, then annealed at high temperature (i.e., at least 450.degree. C.) in a nitrogen atmosphere. The resulting article comprises a transparent conductive material that reduces the trade-off between low resistivity (or sheet resistance) and high near infrared transmission. For example, the transparent conductive material thus obtained may possess a transmission of at least 80% at 1550 nm while having a resistivity of less than or equal to about 5.times.10.sup.-4 Ohm-cm and a Haacke figure of merit of at least about 40.times.10.sup.-4.OMEGA..sup.-1. Also provided is a method for modulating the resistivity and/or the near infrared transmission of a transparent conductive material by annealing the transparent conductive material at a high temperature under nitrogen atmosphere.