Corning Incorporated
Carrier substrates for semiconductor processing

Abstract:

A carrier substrate includes a base layer having a first surface, and having a second surface that is parallel to and opposite of the first surface. The carrier substrate further includes a glass layer bonded to the first surface of the base layer. The carrier substrate has a Young's modulus greater than or equal to 150 GPa. A carrier substrate includes a polycrystalline ceramic and has a Young's modulus greater than or equal to 150 GPa. The carrier substrate has a coefficient of thermal expansion of greater than or equal to 20.times.10.sup.-7/.degree. C. to less than or equal to 120.times.10.sup.-7/.degree. C. over a range from 25.degree. C. to 500.degree. C.