Honda Motor Co., Ltd.
Semiconductor device

Abstract:

This semiconductor device includes a memory semiconductor chip having a plurality of memory cells, a planar buffer chip which is a semiconductor chip that comprises a plurality of buffer circuits which hold data read from the memory cell and data written to the memory cell and which output the held data in accordance with the number of bit lines of the plurality of memory cells, an electrical connection structure which electrically connects the bit lines of the memory cells of the memory semiconductor chip and the buffer circuits of the planar buffer chip to each other in a thickness direction of the memory semiconductor chip and the planar buffer chip, and a plurality of bit wiring layers provided in accordance with the respective buffer circuits and electrically connected to the bit lines of the buffer circuits. The bit wiring layers are laminated on the planar buffer chip.