International Business Machines Corporation
Embedded MRAM Device with Top Via

Abstract:

Techniques for integrating an embedded MRAM device with a BEOL interconnect structure are provided. In one aspect, a method of forming an embedded MRAM device includes: depositing a cap layer onto a substrate; forming a metal line and metal pad on the cap layer; patterning the metal line to form first top vias, and the metal pad to form a second top via; depositing a dielectric material onto the substrate surrounding the first/second top vias; recessing the second top via to form a bottom contact via self-aligned to the metal pad which serves as a bottom contact; forming an MRAM cell over the bottom contact via; and forming first/second top contacts in contact with the first top vias/the MRAM cell. An embedded MRAM device is also provided.