International Business Machines Corporation
Tunable Forming Voltage for RRAM Device

Abstract:

The present invention provides RRAM devices with tunable forming voltage. In one aspect, a method of forming an RRAM device includes: depositing a first dielectric layer on a substrate; forming metal pads in the first dielectric layer; depositing a capping layer onto the first dielectric layer; forming heating elements in the capping layer in contact with the metal pads; forming an RRAM stack on the capping layer; patterning the RRAM stack into an RRAM cell(s) including a bottom electrode, a high-.kappa. switching layer disposed on the bottom electrode, and a top electrode disposed on the high-.kappa. switching layer; depositing a second dielectric layer over the RRAM cell(s); and forming a contact to the top electrode in the second dielectric layer. An RRAM device and a method of operating an RRAM device are also provided.