International Business Machines Corporation
On-chip integrated temperature protection device based on gel electrolyte

Abstract:

A field effect transistor includes an exposed channel region disposed between a source region and a drain region. A gate electrode is disposed over the exposed channel region. An electrolyte gel is disposed between the gate electrode and the exposed channel region, wherein ions are immobilized in the electrolyte gel below a transition temperature and mobilized above the transition temperature to increase device resistance.