International Business Machines Corporation
Wimpy device by selective laser annealing

Abstract:

A device having co-integrated wimpy and nominal transistors includes first source/drain regions formed with a semiconductor alloy imparting strain into a first channel region. The device also has wimpy transistors including second source/drain regions formed with the semiconductor alloy that has been decomposed to include a larger amount of an electrically active atomic element than contained in the semiconductor alloy of the first source/drain region.