International Business Machines Corporation
Fabrication of vertical fin field effect transistors having top air spacers and a self aligned top junction

Abstract:

A method of fabricating adjacent vertical fins with top source/drains having an air spacer and a self-aligned top junction, including, forming two or more vertical fins on a bottom source/drain, forming a top source/drain on each of the two or more vertical fins, wherein the top source/drains are formed to a size that leaves a gap between the adjacent vertical fins, and forming a source/drain liner on the top source/drains, where the source/drain liner occludes the gap between adjacent top source/drains to form a void space between adjacent vertical fins.