International Business Machines Corporation
Self-aligned contacts for vertical field effect transistors

Abstract:

Semiconductor devices and methods of forming the same include forming a gate stack in contact with sidewalls of a semiconductor fin and on a bottom spacer over a bottom source/drain region. An encapsulating material is selectively deposited over the gate stack, leaving the bottom spacer exposed. An inter-layer dielectric is formed over the encapsulating material. A via is formed in the inter-layer dielectric to contact the bottom source/drain layer.