International Business Machines Corporation
Source/drain for gate-all-around devices

Abstract:

A method of forming a nanosheet device is provided. The method includes forming two amorphous source/drain fills on a substrate and one or more semiconductor nanosheet layers between the two amorphous source/drain fills. The method further includes forming a gate dielectric layer on exposed portions of the one or more semiconductor nanosheet layers. The method further includes forming a protective capping layer on the gate dielectric layer, and subjecting the two amorphous source/drain fills to a recrystallization treatment to cause a phase change from the amorphous state to a single crystal or poly-crystalline phase.