International Business Machines Corporation
High voltage photovoltaics integrated with light emitting diode containing zinc oxide containing layer

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Abstract:

An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

Status:
Grant
Type:

Utility

Filling date:

3 Jan 2020

Issue date:

17 Aug 2021