International Business Machines Corporation
Formation of semiconductor devices including electrically programmable fuses
Last updated:
Abstract:
A method for fabricating a semiconductor device including an electrically programmable fuse includes forming conductive material within one or more openings formed through a dielectric material disposed on a first electrode, and forming one or more second electrodes by planarizing the conductive material. Forming the conductive material includes forming one or more voids encapsulated by the conductive material such that the one or more voids have boundaries defined in part by portions of the conductive material corresponding to fuse links disposed between the one or more voids and the dielectric material.
Status:
Grant
Type:
Utility
Filling date:
25 Oct 2019
Issue date:
17 Aug 2021