International Business Machines Corporation
Buried power rail for transistor devices

Abstract:

A method of forming a buried power rail for transistor devices is provided. The method includes forming an adjacent pair of transistor devices on a substrate, wherein the adjacent pair of transistor devices is separated by a gap distance, G.sub.D, filled by a fill layer. The method further includes forming a dielectric plate between the adjacent pair of transistor devices by removing a portion of the fill layer, and forming a protective liner on each of the adjacent pair of transistor devices. The method further includes forming a sidewall spacer on each of the protective liners, and forming a buried power rail on the dielectric plate and between the sidewall spacers. The method further includes removing a portion of the sidewall spacers above the buried power rail to form spacer bars on the dielectric plate, and forming a power rail cap on the buried power rail and spacer bars.