International Business Machines Corporation
Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip

Abstract:

A method for manufacturing a semiconductor device includes forming a first plurality of fins in a first device region on a substrate, forming a second plurality of fins in a second device region on the substrate, forming bottom source/drain regions on the substrate and around lower portions of each of the first and second plurality of fins in the first and second device regions, forming a dummy spacer layer on the bottom source/drain region in the first device region, wherein the dummy spacer layer includes one or more dopants, and forming a plurality of doped regions in the first and second plurality of fins in the first and second device regions, wherein the plurality of doped regions in the first device region extend to a greater height on the first plurality of fins than the plurality of doped regions in the second device region on the second plurality of fins.