International Business Machines Corporation
Electromigration test structures for void localization

Abstract:

An electromigration (EM) test structure for localizing EM-induced voids is provided. The EM test structure includes an EM test element, a via, and a stress line. The EM test element includes a first force pad and a first sense pad. The via electrically connects the EM test element to the stress line. A second end portion of the stress line includes a second force pad and a second sense pad. The second force pad defines, at least in part, a conductive pathway between the first and second force pads. The second sense pad defines, at least in part, a conductive pathway between the first and second sense pads to facilitate four-terminal resistance measurements. A first end portion of the stress line includes a third sense pad that defines, at least in part, a conductive pathway between the first and third sense pads to facilitate four-terminal resistance measurements.