International Business Machines Corporation
Integration of split gate metal-oxide-nitride-oxide-semiconductor memory with vertical FET

Abstract:

Embodiments of the present invention are directed to techniques for integrating a split gate metal-oxide-nitride-oxide-semiconductor (SG-MONOS) memory with a vertical field effect transistor (VFET). In a non-limiting embodiment of the invention, a vertical SG-MONOS memory device is formed on a first region of a substrate. The SG-MONOS memory device can include a charge storage stack, a memory gate on the charge storage stack, and a control gate vertically stacked over the charge storage stack and the memory gate. A VFET is formed on a second region of the substrate. The VFET can include a logic gate.