International Business Machines Corporation
Self-aligned repaired top via

Abstract:

A method for fabricating a semiconductor device includes forming conductive material on a first metallization level including at least one via disposed on at least one conductive line, subtractively patterning the conductive material to form at least one conductive layer corresponding to at least one conductive line of a second metallization level misaligned with the at least one via of the first metallization level, and at least one cavity within the at least one via forming at least one damaged via resulting from the misalignment, and filling the at least one cavity with conductive liner material to form a filled cavity to repair the at least one damaged via.