International Business Machines Corporation
Nanopore and DNA sensor employing nanopore

Abstract:

A method of forming a nanopore that includes forming a pore geometry hard mask on a semiconductor substrate; and oxidizing the semiconductor substrate to form an oxide layer on exposed surfaces of the semiconductor substrate. An apex portion of the oxide layer extends beneath an edge of the pore geometry hard mask. The pore geometry hard mask is removed, and the semiconductor substrate is etched with an etch that is selective to the oxide layer to provide the nanopore. The opening of the nanopore has a diameter defined by the apex portion of the oxide layer.