International Business Machines Corporation
SELF-ALIGNED BLOCK VIA PATTERNING FOR DUAL DAMASCENE DOUBLE PATTERNED METAL LINES
Last updated:
Abstract:
Embodiments of the present invention disclose a method and apparatus for making a multi-layer device comprising a conductive layer, a dielectric layer formed on top of conductive layer, a via pattern formed in the dielectric layer, wherein the via pattern is comprised of a plurality of channels and columns, wherein a first portion of the via pattern downwards extends through the entire dielectric layer to directly contact the conductive layer, wherein a second portion of the via pattern extends downwards without coming into direct contact with the conductive layer.
Status:
Application
Type:
Utility
Filling date:
6 Mar 2020
Issue date:
9 Sep 2021