International Business Machines Corporation
SELF-ALIGNED BLOCK VIA PATTERNING FOR DUAL DAMASCENE DOUBLE PATTERNED METAL LINES

Last updated:

Abstract:

Embodiments of the present invention disclose a method and apparatus for making a multi-layer device comprising a conductive layer, a dielectric layer formed on top of conductive layer, a via pattern formed in the dielectric layer, wherein the via pattern is comprised of a plurality of channels and columns, wherein a first portion of the via pattern downwards extends through the entire dielectric layer to directly contact the conductive layer, wherein a second portion of the via pattern extends downwards without coming into direct contact with the conductive layer.

Status:
Application
Type:

Utility

Filling date:

6 Mar 2020

Issue date:

9 Sep 2021