International Business Machines Corporation
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor

Abstract:

A method for forming a metal-insulator-metal (MIM) capacitor on a semiconductor substrate is presented. The method includes forming a first electrode defining columnar grains, forming a dielectric layer over the first electrode, and forming a second electrode over the dielectric layer. The first and second electrodes can be titanium nitride (TiN) electrodes. The dielectric layer can include one of hafnium oxide and zirconium oxide deposited by atomic layer deposition (ALD). The ALD results in deposition of high-k films in grain boundaries of the first electrode.