International Business Machines Corporation
Semiconductor device and method of forming the semiconductor device

Last updated:

Abstract:

A semiconductor device includes a fin structure having a circular cylindrical shape, and including a first recess formed on a first side of the fin structure and a second recess formed on a second side of the fin structure opposite the first side, an inner gate formed inside the fin structure, and an inner gate insulating layer formed between the inner gate and an inner surface of the fin structure.

Status:
Grant
Type:

Utility

Filling date:

30 Apr 2019

Issue date:

21 Sep 2021